Forced Ion Migration for Chalcogenide Phase Change Memory Device
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منابع مشابه
United States Patent Campbell (54) Forced Ion Migration for Chalcogenide Phase Change Memory Device
Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase change memories. The devices tested included GeTe/SnTe, Ge2Se3/ SnTe, and Gez Se,/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was crit...
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